Disorder was introduced by the implantation of 30Si+ ions to a wide range of doses, and was studied by means of Raman scattering, and Rutherford back-scattering channelling techniques. It was shown that, due to the different sensitivities of these methods to various defect structures, it was possible to distinguish between several different types of implantation-induced disorder. The Raman scattering results indicated that a second type of amorphous structure, with medium-range order, grew at the expense of a continuous random network structure; even at doses which were beyond the threshold for complete amorphization.

U.V.Desnica, I.D.Desnica, M.Ivanda, T.E.Haynes: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 236-9