Almost dislocation-free 75mm-diameter Si-doped crystals were grown by using a vapor-pressure controlled Czochralski method. The generation of slip dislocations was suppressed, and the growth of dislocation-free crystals was encouraged, by decreasing the thickness of B2O3. The vapor-pressure controlled Czochralski crystals contained a large amount (about 1018/cm3) of unintentionally doped B. By comparing electrical data for these crystals, with results for B-free gradient-freeze crystals, it was found that B acceptors decreased the intrinsic compensation ratio.

K.Hashio, S.Sawada, M.Tatsumi, K.Fujita, S.Akai: Journal of Crystal Growth, 1997, 173[1-2], 33-41