By using deep-level transient spectroscopy, a trap which was related to misfit dislocations in heterostructures was detected. Its characteristics agreed well with previous data on a dislocation-related defect in plastically deformed GaAs. By using newly developed criteria to distinguish deep band-like and localized states via deep-level transient spectroscopy, this level was shown to originate from point defects which were at, or very near to, the dislocation core. The temperature dependence of the electron beam-induced current contrast of - and -misfit dislocations was also measured for the same dislocations.

L.Panepinto, U.Zeimer, W.Seifert, M.Seibt, F.Bugge, M.Weyers, W.Schröter: Materials Science and Engineering B, 1996, 42[1-3], 77-81