It was demonstrated that, in principle, a thin monocrystalline semiconductor film, when twist wafer-bonded to a bulk monocrystalline substrate of the same material, would comply with the lattice constant of a thick monocrystalline film of a different semiconductor which was then grown on its surface. A 10nm film of GaAs was here wafer-bonded to a bulk GaAs substrate, with a large twist angle between their <110> directions. The resultant twist boundary permitted a high flexibility of the thin film. Dislocation-free films of Ga0.65In0.35P (approximately 1% strain) could then be grown to thicknesses of 300nm on twist wafer-bonded films of GaAs. This was 30 times the Matthews-Blakeslee critical thickness.

F.E.Ejeckam, Y.H.Lo, S.Subramanian, H.Q.Hou, B.E.Hammons: Applied Physics Letters, 1997, 70[13], 1685-7