The reduction in threading dislocation density, and the suppression of crack formation, were investigated, using transmission electron microscopy, in In0.5Ga0.5P which had been grown onto Si by using multi-strained short-period superlattices. The epitaxial layers were grown 2-dimensionally, and the density of threading dislocations was reduced by the generation of misfit dislocations at all of the hetero-interfaces. The residual strain was reduced by compensation of the lattice-mismatched stress and the thermal stress, and crack formation was suppressed by controlling the In composition.

Y.Takagi, H.Yonezu, S.Uesugi, N.Ohshima: Japanese Journal of Applied Physics, 1997, 36[2-2B], L187-9