The co-diffusion of As and B in polycrystalline and monocrystalline bi-layers, during the formation of shallow N+ emitters, was studied. It was found that rapid thermal annealing led to the redistribution, as measured by secondary ion mass spectrometry, of As and B which were successively implanted into a 380nm low-pressure chemical vapor-deposited polycrystalline layer. Hall effect and sheet resistance measurements showed that the activation of dopants in co-implanted structures was satisfactory above a rapid thermal annealing temperature of 1100C.

C.Gontrand, P.Sellitto, S.Tabikh, S.Latreche, A.Kaminski: Journal de Physique III, 1997, 7[1], 47-58