The configurational transformation properties of 2 previously observed metastable defects in 6H-type material were studied by using various junction space-charge techniques and simulations. It was found that the transformation of the configurations was governed mainly by the energy which was released during electron capture processes. The deduced configuration transformation rates were used to simulate the annealing properties of the defects, and good agreement with measured data was obtained.

Configuration Transformation of Metastable Defects in 6H-SiC. G.Hemmingsson, N.T.Son, O.Kordina, J.L.Lindström, E.Janzén: Semiconductor Science and Technology, 1999, 14[3], 251-6