Wafer samples were pre-amorphized by implanting Si+ or Ge+ ions at temperatures of between 5 and 40C. The diffusion of 4keV B+ implants into the pre-amorphized material was used to monitor the flow of interstitials from the end-of-range region and towards the surface. Transient enhanced diffusion in re-grown material was observed for all of the implantation conditions. It was noted that increasing the temperature for Si+ implantation by as little as 15C could produce a marked decrease in the magnitude of the interstitial flux which passed from the end-of-range region and towards the surface. This sensitivity to the temperature appeared to be even greater for Ge+ implantation. As-implanted cross-sectional transmission electron micrographs revealed a measurable decrease in the thickness of the amorphous layer (up to 30nm) when the implantation temperature was increased from 5 to 40C, as a result of ion beam-induced epitaxial recrystallization. Upon annealing at 800C, two types of defect were observed in the end-of-range region. These were {311} defects and dislocation loops. The {311} defects were unstable, and a comparison of secondary ion mass spectroscopic and transmission electron microscopic data for annealed samples indicated that the dissolution of these {311} defects constituted at least one source of interstitials for transient enhanced diffusion in re-grown material at 800C. The end-of-range dislocation loops were stable under the annealing conditions (800C, 0.25h) which were used. There appeared to be an exponential dependence of transient enhanced diffusion, in re-grown material, upon the density of end-of-range dislocation loops.

K.S.Jones, K.Moller, J.Chen, M.Puga-Lambers, B.Freer, J.Berstein, L.Rubin: Journal of Applied Physics, 1997, 81[9], 6051-5