The temperature dependences of the creation and passivation of interface traps in irradiated MOSFET devices during annealing were investigated. The results showed that creation was directly related to the neutralization of positive oxide-trapped charge, and that H atoms and water molecules were directly responsible for creation and passivation, respectively. The long time-scale and temperature dependence of the generation of interface traps were explained in terms of a so-called modified H ion transport model. According to the proposed model, the generation and passivation of interface traps occurred simultaneously.

M.Pejovic, G.Ristic: Solid-State Electronics, 1997, 41[5], 715-20