The incorporation of P from a spun-on dopant layer at 400C was considered. Annealing experiments were performed on dopant films which had been deposited onto (100)Si substrates by using the spin-on technique. Conventional heating, in a normal atmosphere at temperatures of up to 400C, was used to study dopant incorporation. After removing the spun-on dopant film, part of the Si substrate was annealed at higher temperatures. The P concentration profiles in low-temperature annealed samples revealed diffusion depths of 60 to 80nm (extrapolated to a substrate dopant level of 1016/cm3), and surface concentrations of between 1010 and 1020/cm2.

U.Mohr, R.Leihkauf, K.Jacob: Applied Physics A, 1997, 64[1], 77-81