Arrays of dislocations in float-zone wafers were investigated by using deep-level transient spectroscopy and light beam-induced current-mapping techniques. The latter method appeared to be able to identify and detect these arrays, and evaluate their recombination strength. In dislocated float-zone wafers, P diffusion strongly attenuated the light beam-induced current dislocation contrast; depending upon the duration and temperature of the treatment. The room-temperature electrical activity of the defects, which were still present, seemed to disappear. At the same time, the peak intensity of the deep-level transient spectra which were related to dislocations was reduced to an extent which depended upon the P diffusion temperature and duration.

I.Perichaud, J.J.Simon, S.Martinuzzi: Materials Science and Engineering B, 1996, 42[1-3], 265-9