A quantitative model of P-diffusion gettering was presented which combined the effects of segregation and self-interstitial injection upon the distribution of dissolved metallic impurities. The model described metal diffusion in the bulk and in highly P-doped layers, and made it possible to include P diffusion models. By analyzing an approximate solution for the quasi steady-state metal distribution it was shown that, for impurities such as Au and Pt, self-interstitial injection enhanced the gettering efficiency as compared with pure segregation. The results were applied to the P-diffusion gettering of Au, and it was demonstrated that all of the relevant features of reported Au distributions could be explained. In the case of 3d metals, which dissolved predominantly at interstitial sites in intrinsic Si, the model permitted the inclusion of the formation of precipitates which resulted from self-interstitial injection.

E.Spiecker, M.Seibt, W.Schröter: Physical Review B, 1997, 55[15], 9577-83