Defect formation in Au-doped n-type material under irradiation with electrons having a sub-threshold energy, was studied by means of deep-level transient spectroscopy. The formation of at least 3 new electrically active defects was observed. It was shown that the Ec - 0.20eV energy level was associated with a H-Au complex. Both of the above treatments were found to stimulate H transport in silicon.

O.V.Feklisova, E.B.Yakimov, N.A.Yarykin: Materials Science and Engineering B, 1996, 42[1-3], 274-6