Recent results on extended defect formation after ion implantation were reviewed. It was noted that interstitial evaporation from {311} extended defects predominated transient diffusion for most temperatures, times, and dopant concentrations that were of technological interest. Reactions between interstitials and impurities had been investigated by measuring the effect of O, P, B and C impurities upon {311} defects. Interstitial traps such as B and C exerted a marked effect at concentrations above 1011/cm3. Damage and defect formation had been characterized for very shallow implants (2 to 5keV Si). It was found that, even above the amorphization threshold, stable {311} defects dominated the microstructure, in spite of the proximity of the surface.

D.J.Eaglesham, A.Agarwal, T.E.Haynes, H.J.Gossmann, D.C.Jacobson, J.M.Poate: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 1-4