An extensive review was presented of the current status of, and trends in, the ion implantation of Si at low and high energies. Particular emphasis was placed on areas where recent advances had been made and further understanding was needed. These included emerging approaches to defect and dopant distribution modelling, transient enhanced diffusion, high-energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicated that extensive progress had been in 1-dimensional analysis, while considerable problems remained with regard to 2-dimensional characterization. The use of ion beams in industry was illustrated by the successful application of focused beams to machining and repair, and by the development of ion-based lithography. Among the specific topics considered were: Monte Carlo simulation of defect kinetics, extended defect formation, defects in buried oxide formation, pre-amorphization and enhanced diffusion, damage accumulation by low-energy B in Si, and defect engineering.

E.Chason, S.T.Picraux, J.M.Poate, J.O.Borland, M.I.Current, T.Diaz de la Rubia, D.J.Eaglesham, O.W.Holland, M.E.Law, C.W.Magee, J.W.Mayer, J.Melngailis, A.F.Tasch: Journal of Applied Physics, 1997, 81[10], 6513-61