Ions of BF2 were implanted through protective oxide films in order to clarify the behavior of F in damaged regions during rapid thermal annealing. The implant redistribution profiles, as a function of annealing temperature and time, were monitored by means of secondary ion mass spectrometry. Implantation-induced point defects were detected by means of deep-level transient spectroscopy. The effects of both F and rapid thermal annealing implantation-damage annihilation upon transient enhanced B diffusion were investigated. In particular, the F segregation behavior near to the post-implantation damaged/crystalline interface was found to result in clustering and void formation.

L.Kaabi, C.Gontrand, M.Lemiti, B.Remaki, B.Balland, J.Meddeb, O.Marty: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 68-73