Electron paramagnetic resonance methods were used to investigate the build-up of damage in Si, in relaxed crystalline Si1-xGex (where x was equal to 0.04, 0.13, 0.24 or 0.36) and in 6H-SiC, upon increasing the ion dose from about 1012/cm2 to about 1015/cm2 (sufficient to produce an amorphous layer). The Si, SiGe and SiC were implanted with 1.5MeV Si, 2MeV Si and 0.2MeV Ge ions, respectively, at room temperature. A comparison was made of the manner in which the type and population of paramagnetic defects depended upon the ion dose.

R.C.Barklie: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 139-46