Double-crystal X-ray diffraction rocking curves were measured, at 77K, for wafers which had been implanted with 3MeV Ni ions at 130K. Rather symmetrical broadening of the rocking curves of samples which had been implanted with 1014 Ni3+/cm2 was observed. This was suggested to be due to distortion scattering that was caused by vacancies, interstitials, and their agglomerates. A modulated profile in samples which had been implanted with 4 x 1014 Ni3+/cm2 was attributed to a non-uniform strain distribution. Upon further implantation, the modulated profile changed into a monotonic one. This was considered to be the result of strain fluctuations at the same depth and of the existence of amorphous regions which reduced the coherency of X-rays. Annealing was also carried out at up to 1073K. Changes in the rocking curves began even below room temperature, and was essentially continuous. It implied that the recovery of defects was continuous with increasing temperature. Recovery was complete at 1073K.

N.Tsukuda, E.Kuramoto, M.Noda, H.Nakazono: Journal of Nuclear Materials, 1996, 239, 241-4