Deep level transient spectroscopic measurements were performed repeatedly during the transmutation of 67Ga to 67Zn. The radioactive 67Ga was recoil-implanted into p-type 6H-material. The deep-level transient spectra exhibited one peak of time-dependent height. It described the increasing concentration of the daughter element. Thus, one Zn-related level at 1.16eV above the valence-band edge could be definitely identified. There was no Ga deep level in the lower part of the band gap.

Radiotracer Investigation of Deep Ga- and Zn-Related Band-Gap States in 6H-SiC. J.Grillenberger, N.Achtziger, F.Günther, W.Witthuhn: Applied Physics Letters, 1998, 73[25], 3698-700