Transmission electron microscopy was used to study the reduction of extended defect formation in the 80keV B-implanted (up to 2 x 1015/cm2) regions of crystals which were annealed at high temperatures. It was found that the suppression of dislocation formation did not depend upon the depth at which voids were located, upon their density, or upon the purity of the wafer. The carrier mobility in samples which contained void layers was ideal; thus confirming that the presence of voids inhibited defect formation but did not affect carrier mobility. Also, the B diffusivity was proportional to the interstitial concentration, and decreased when a void layer was present. These effects were observed after heat treatment at temperatures above 1000C. The results were explained on the basis of the efficiency of voids for the capture of interstitial Si atoms.

V.Raineri, S.U.Campisano: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 56-9