Paper eintragenThe behavior of defects, in material with B concentrations that ranged from 7.1 x 1017 to 3.1 x 1019/cm3, was studied by using transmission electron microscopy. The precipitation of O, and a change in precipitate morphology from plate to polyhedral, were enhanced by an increased B concentration. In wafers with the highest B content, the precipitate density decreased and aggregates of small polyhedral precipitates were observed on {110} planes. It was also found that, as the B concentration increased, the precipitate size was reduced and the type of induced secondary defect changed from punched-out dislocations to stacking faults. This was attributed to a reduction in the lattice strain.

T.Ono, E.Asayama, H.Horie, M.Hourai, M.Sano, H.Tsuya, K.Nakai: Japanese Journal of Applied Physics, 1997, 36[2-3A], L249-52