A new technique was described for the rapid determination of interstitial O in heavily Sb-doped samples. The technique involved wafer-thinning and low-temperature (10K) infra-red measurements of highly-thinned wafers. The fine structure of the interstitial O absorption band at about 1136/cm was determined. The results showed that this method efficiently reduced free-carrier absorption interference and permitted highly reliable measurements to be made. It could be applied to heavily Sb-doped Si at resistivities down to 0.01cm.

Q.Y.Wang, T.H.Cai, Y.H.Yu, L.Y.Lin: Semiconductor Science and Technology, 1997, 12[4], 464-6