The behavior of oxidation-induced stacking-fault rings in Czochralski-grown crystals was predicted on the basis of the dynamics of point defects during growth. The pre-exponential factors for the equilibrium point defect concentrations and diffusivities were determined by fitting the predictions of the model to a single set of experimental data for oxidation-induced stacking-fault ring dynamics. An asymptotic analysis of the point-defect model led to a closed-form expression for the dependence of the location of oxidation-induced stacking-fault rings upon the processing conditions and the thermophysical properties of point defects at the melting point. The results indicated the differentiation between defect types in Czochralski-grown material could be done entirely on the basis of point-defect dynamics.

T.Sinno, R.A.Brown, W.Von Ammon, E.Dornberger: Applied Physics Letters, 1997, 70[17], 2250-2