Atomic-scale dangling-bond wires on a H-terminated (100)-2 x 1 surface were studied by using ultra-high vacuum scanning tunnelling microscopy. Individual dangling bonds were fabricated by extracting H atoms one-by-one from the H-terminated surface so as to form the dangling-bond wires. The wires exhibited a finite density of states at the Fermi level, and did not have semiconductive band-gaps.

T.Hitosugi, T.Hashizume, S.Heike, S.Watanabe, Y.Wada, T.Hasegawa, K.Kitazawa: Japanese Journal of Applied Physics, 1997, 36[2-3B], L361-4