The damage which was produced by the room-temperature 2MeV Si+ ion-implantation of 3-thick relaxed Si1-xGex layers (where x was 0.04, 0.13, 0.24 or 0.36) was measured as a function of the Ge content and of Si doses ranging from 1010 to 1015/cm2. The accumulation of damage with increasing dose was studied, as a function of Ge content, by means of Rutherford back-scattering spectrometry, optical reflectivity depth-profiling and transmission electron microscopy. An increased damage efficiency was observed with increasing x-value.

C.O’Raifeartaigh, R.C.Barklie, L.A.Nylandsted, F.Priolo, G.Franzo, G.Lulli, M.Bianconi, J.K.N.Lindner, F.Cristiano, P.L.F.Hemment: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 165-8