Paper eintragenThe synthesis of SiGe/Si heterostructures by Ge+ ion implantation was reported. The 400keV ions were implanted into (001)Si wafers to doses that ranged from 3 x 1016 to 1017/cm2. This was followed by Si+ amorphization and low-temperature solid-phase epitaxial re-growth. Transmission electron microscopic investigations showed that strained alloys could be fabricated if the elastic strain energy of the SiGe layer did not exceed a critical value, of about 300mJ/m2, which was independent of the implantation energy. The analysis also suggested that so-called hair-pin dislocations formed as strain-relieving defects in relaxed structures.

F.Cristiano, A.Nejim, B.De Mauduit, A.Claverie, P.L.F.Hemment: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 156-60