The defects which were created by implanting single quantum wells with B ions to a dose of 1012/cm2 were studied by means of deep-level transient spectroscopy. At low Ge contents, an H2 defect level, at an energy that was 0.52eV above the Si valence band edge was found in the well region and its boundaries. In samples with a higher Ge content (such that the strain was released), an E2 electron trap was created, rather than H2, by implantation. Rapid thermal annealing at 600C removed most of the H2 defects.

F.Lu, J.Wang, J.Jiang, D.Gong, H.Sun, X.Wang: Journal of Physics - Condensed Matter, 1997, 9[16], 3427-33