In order to obtain hetero-epitaxial layers with a lower defect density, molecular beam epitaxial growth was performed by using a 3-step temperature correction which took account of cell radiation and surface emissivity effects that were superposed on the Fabry-Perot interference oscillation in the pyrometric temperature. The optimum correction rates of the growth temperature were determined by analyzing double-crystal X-ray rocking curves. An empirical profile, for the control temperature as a function of growth time, was proposed for optimum ZnSSe growth. It was found that, whereas the etch pit density was up to 8 x 104/cm2 after normal molecular beam epitaxial growth, an etch pit density of less than 5 x 103/cm2 (the lowest value so far reported) was found in ZnSSe/GaAs(100) epilayers which had been grown by using the linearly corrected profile.

J.Y.Leem, J.S.Son_ C.S.Kim, Y.K.Cho, S.K.Noh, H.S.Park, M.D.Kim, T.I.Kim: Semiconductor Science and Technology, 1997, 12[6], 767-70