Steady-state and time-resolved photoluminescence studies were made of ZnSxSe1-x epilayers, on GaAs substrates, which had been grown by means of molecular beam epitaxy at close to the lattice-matching composition (x-value of between 0 and 0.12). The photoluminescence decay dynamics of the epilayers were investigated and it was found that the decay time, when the epilayer was closely lattice-matched to the substrate, was longer than that of any other sample. This was explained by suggesting that the defects which were introduced by lattice mismatch acted as non-radiative recombination centers and thereby reduced the photoluminescence lifetimes of the epilayers.

E.J.Shin, J.I.Lee, N.Q.Liem, D.Kim, J.S.Son, J.Y.Leem, S.K.Noh, D.Lee: Solid State Communications, 1997, 102[12], 855-9