Native extended defects in pseudomorphic ZnSe/GaAs(001) and lattice-matched ZnSe/Ga0.96In0.04As(001) heterostructures were studied by means of transmission electron microscopy. The predominant defects in the layers were found to be Shockley stacking-fault pairs, which lay on (111) and (¯1¯11) fault planes, and single Frank stacking faults which lay on (¯111) or (1¯11) fault planes. This was deduced by comparing experimentally obtained images with simulated images, and with the predictions of the g•b = 0 rule.

J.M.Bonard, J.D.Ganière, S.Heun, J.J.Paggel, S.Rubini, L.Sorba, A.Franciosi: Philosophical Magazine Letters, 1997, 75[4], 219-26