Two Ga-acceptor levels, which were located at Ev + 0.31eV and Ev + 0.37eV, were observed in implantation-induced p+n diodes by using deep-level transient spectroscopy. The behavior of the implanted Ga was very similar to that of implanted Al, except that the positions of the introduced levels were different. This result strongly supported a recent model which had been used to explain the discrepancy in the results for B and Al implantation-induced deep levels. As well as the 2 acceptor levels, a thermally stable electron trap was also observed and was tentatively attributed to a Ga-related complex.

Gallium Implantation Induced Deep Levels in n-Type 6H-SiC. M.Gong, S.Fung, C.D.Beling, G.Brauer, H.Wirth, W.Skorupa: Journal of Applied Physics, 1999, 85[1], 105-7