The incorporation of substitutional Ge into 3C-type material was studied theoretically by using an anharmonic Keating model which was specially adapted to the prediction of the structural properties and lattice dynamics of Si1-x-yGexCy. Basic energy calculations showed that the replacement of Si by Ge was more probable than the replacement of C by Ge in the zincblende crystals. If Ge replaced only Si, then the lattice parameter was given by: 0.43593 + 0.000337y. Vegard's law was not applicable.

Substitutional Ge in 3C-SiC. C.Guedj, J.Kolodzey: Applied Physics Letters, 1999, 74[5], 691-3