The photoluminescence spectra of as-implanted samples, or of samples which had been annealed in N2 at temperatures below 1000C, consisted of 3 bands which were centered at about 470, 550 and 630nm. Annealing for long periods at temperatures above 1000C produced a band which peaked at about 730nm. The peak wavelengths of these 4 bands were independent of the annealing conditions. As the annealing temperature was increased, the 470, 550 and 630nm bands first intensified and then weakened; with intensity maxima at 600, 300 and 200C, respectively. As the annealing time was increased from 60s, they weakened monotonically. The 730nm band always strengthened. It was suggested that the 470, 550 and 630nm bands were associated with various point defects in the bulk of Si-implanted oxide, while the 730nm band was due to luminescence centers at the interface between nanocrystalline Si and the oxide matrix.

H.Z.Song, X.M.Bao: Physical Review B, 1997, 55[11], 6988-93