Direct-current arc-jet chemical vapor deposited material was vacuum annealed (1273K, 1h), and the sizes, volume fractions, and spatial distributions of defects before and after annealing were determined by using Doppler broadening and lifetime positron annihilation spectroscopy, high-resolution transmission electron microscopy, transmission electron energy loss and forward recoil spectrometry. The results indicated that both intercrystalline and intracrystalline modifications of the defects occurred. Appreciable structural and chemical alterations occurred at, or near to, grain boundaries. The observations supported the suggestion, of a defect spectrum in chemical vapor deposited diamond, which has been based upon thermal conductivity data.

P.M.Fabis: Thin Solid Films, 1996, 288[1-2], 193-7