The recrystallization of 6H-type material, which had been implanted with 200keV Ge+ ions to a dose of 1015/cm2 and annealed (1500C, 600s), was studied by means of combined cross-sectional and planar-view transmission electron microscopy. The types of defect which appeared during recrystallization, and their role in the 6H to 3C (cubic) transformation of the recrystallized zone, were analyzed.

Y.Pacaud, W.Skorupa, J.Stoemenos: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 181-5