The implantation of P and B ions was carried out using energies ranging from 50keV to 4MeV. Annealing was performed at temperatures ranging from 1400 to 1700C. The implanted P was found to be stable at the annealing temperatures which were used, but the B was redistributed during annealing. The implantation damage was effectively annealed out; as indicated by Rutherford back-scattering data.

M.V.Rao, J.A.Gardner, P.H.Chi, O.W.Holland, G.Kelner, J.Kretchmer, M.Ghezzo: Journal of Applied Physics, 1997, 81[10], 6635-41