A study was made of defect reduction and recrystallization during the annealing of Ge+-implanted 6H-type material which had been implanted with 200keV ions to doses of 1014 or 1015/cm2. Furnace annealing was carried out at temperatures of 500, 950 and 1500C. Rutherford back-scattering spectrometry channelling, positron annihilation spectroscopy and cross-sectional transmission electron microscopy were used to characterize the samples. It was shown that damage removal was more complicated here than in the case of ion-implanted Si. The recrystallization of amorphized carbide layers was found to be unsatisfactory for temperatures of up to 1500C. The use of ion beam-induced epitaxial crystallization was more successful and lattice re-growth, albeit imperfect, occurred at a temperature as low as 500C.

Y.Pacaud, J.Stoemenos, G.Brauer, R.A.Yankov, V.Heera, M.Voelskow, R.Kögler, W.Skorupa: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 177-80