The electrical properties were determined, as a function of temperature and S pressure, at temperatures of between 600 and 1000C. The CuCrSx was a non-stoichiometric semiconductor which exhibited an n-p transition. The n-type domain ranged from x = 1.92 to x = 2.00, while the p-type domain was very narrow. At high S pressures (p-type), the isothermal conductivity was proportional to the S partial pressure. This behavior was attributed to the presence of ionized Cu di-vacancies. In the n-type domain, the deviation from stoichiometry was proportional to the S partial pressure. This behavior was attributed to the presence of ionized interstitial Cr.

M.A.Boutbila, J.Rasneur, M.El Aatmani, H.Lyahyaoui: Journal of Alloys and Compounds, 1996, 244[1-2], 23-6