The Zn1-xCdxSe, where x was approximately equal to 0.5, was lattice-matched to (001)InP substrates by means of molecular beam epitaxy. The effect, of incorporating an InP buffer layer, upon the properties of the ZnCdSe films was studied. Transmission electron microscopy showed that a reduction in the density of stacking faults, from 5 x 109 to 5 x 107/cm2, was achieved by using a buffer layer. Grown-in Shockley-type stacking faults were the only defects which were observed in the ZnCdSe. The (004) X-ray diffraction rocking curve was found to become as narrow as 73arcsec, and the photoluminescence emission peak became narrower and more intense. The lower defect density was attributed to an overall improvement in the InP surface; thus permitting better 2-dimensional nucleation of II-VI growth.

E.Snoeks, S.Herko, L.Zhao, B.Yang, A.Cavus, L.Zeng, M.C.Tamargo: Applied Physics Letters, 1997, 70[17], 2259-61