Epitaxial layers which had been grown onto GaAs by means of molecular beam epitaxy were studied, by using photoluminescence techniques, as a function of temperature and hydrostatic pressure. The S-related emission peak, P2, was identified as being a deep-level emission by means of hydrostatic-pressure photoluminescence measurements. This indicated that S atoms formed iso-electronic centers in a ZnTe matrix.

W.K.Ge, S.B.Lam, I.K.Sou, J.Wang, Y.Wang, G.H.Li, H.X.Han, Z.P.Wan: Physical Review B, 1997, 55[15], 10035-9