High-resolution X-ray photo-electron diffraction patterns were obtained along high-symmetry azimuths of the (3 x 3) and (v3 x v3)R30º reconstructed (00▪1) Si surfaces of 6H-type material. These were compared with X-ray photo-electron diffraction patterns of Si(111)-(7 x 7), and with proposed models for the present reconstructions. Forward-scattering features, which were similar to those observed from Si(111)-(7 x 7), were also obtained from the (v3 x v3)R30º (00▪1) Si surface of SiC. Additional observed structures were attributed to the substitution of C atoms for Si. Unlike the case of (1 x 1) and (7 x 7) Si(111) surfaces, the X-ray photo-electron diffraction patterns of the (3 x 3) and (v3 x v3)R30º (00▪1) Si surfaces of SiC were different. This was attributed to the presence of an incomplete bilayer of Si on the (3 x 3) surface. The most significant difference with respect to the Si system was the equivalence of the [10▪0] and [01▪0] azimuths in the (3 x 3) structure. The results were consistent with a faulted Si bilayer stacking sequence, which had been proposed on the basis of scanning tunnelling microscope observations.

X-Ray Photoelectron Diffraction from (3 x 3) and (v3 x v3) R30º (0001)Si 6H-SiC Surfaces. S.W.King, C.Ronning, R.F.Davis, R.S.Busby, R.J.Nemanich: Journal of Applied Physics, 1998, 84[11], 6042-8