A study was made of the contributions of segregation, diffusion and aggregation to the broadening of δ-doped planes of Be in Ga0.67Al0.33As. It was found that sharp spikes of Be could be obtained for sheet densities which were below 1013/cm2 and for growth temperatures of 500C or less. At higher temperatures or densities, segregation or concentration-dependent rapid diffusion could occur; thus causing significant spreading even during growth. The co-deposition of Si and Be markedly reduced this broadening.

J.J.Harris, J.B.Clegg, R.B.Beall, J.Castagné, K.Woodbridge, C.Roberts: Journal of Crystal Growth, 1991, 111[1-4], 239-45