A molecular beam epitaxial technique was developed in order to suppress Be diffusion by incorporating In into a GaAlAs epilayer. The diffusion coefficients of Be-doped Inx(Ga0.9Al0.1)1-xAs, grown at 600C, decreased from 10-14 to 2 x 10-15cm2/s when the InAs mole fraction, x, was increased from 0 to 0.07. This indicated that compressive stresses in the epilayer, caused by the incorporation of In, played an important role in suppressing Be diffusion.

T.Tomioka, T.Fujii, H.Ishikawa, S.Sasa, A.Endoh, Y.Bamba, K.Ishii, Y.Kataoka: Japanese Journal of Applied Physics, 1990, 29[5], L716-9