A study was made of the contributions of segregation, diffusion and aggregation to the broadening of δ-doped planes of Sn in Ga0.67Al0.33As. It was found that the Sn planes were severely broadened by all 3 processes. At higher temperatures or densities, segregation or concentration-dependent rapid diffusion could occur; thus causing significant spreading even during growth.

J.J.Harris, J.B.Clegg, R.B.Beall, J.Castagné, K.Woodbridge, C.Roberts: Journal of Crystal Growth, 1991, 111[1-4], 239-45