The As concentration profiles ahead of a crystal interface, when advancing into a Ga-rich solution, were determined (during the electro-epitaxial growth of layers) by using computer simulation techniques. The effects of Peltier heating or cooling, and of electromigration, during growth were incorporated. The growth velocity in the absence or presence of convection, due to the Peltier effect and to electromigration, was calculated under various conditions. It was observed that there was a transition, in the movement of As atoms towards the crystal interface, from smooth and orderly to turbulent and wavy as the intensity of the electric field increased during electro-epitaxial growth.

R.S.Q.Fareed, R.Dhanasekaran, P.Ramasamy: Journal of Applied Physics, 1994, 75[8], 3953-8