Photo-electron diffraction and X-ray photo-electron spectroscopic measurements were performed on 3 different reconstructed (00•1) surfaces of 6H-type material. One of these was the Si-rich 3 x 3 surface, and the others were the C-rich (v3 x v3)R30º and (6v3 x 6v3)R30º reconstructed surfaces. In each case, the C 1s and Si 2p core-level lines and photo-electron diffraction patterns were compared with double-scattering calculations for an ideal unreconstructed surface. No significant differences were observed, between the experimental C 1s and Si 2p bulk component photo-electron diffraction patterns, with changes in surface reconstruction. The experimental patterns fitted the simulations of an unreconstructed model quite well. In the case of the highly C-rich (6v3 x 6v3)R30º reconstructed surface, photo-electron diffraction patterns of the various deconvoluted components of the C 1s core line were obtained. The agreement, between the experimental C 1s surface component photo-electron diffraction diagram and calculations, suggested a model for the reconstruction which was based upon the presence of Si adatoms at T4 sites, which were covered by a commensurable graphite top layer.

X-Ray Photoelectron Characterization of 6H-SiC(0001). L.Simon, J.L.Bischoff, L.Kubler: Physical Review B, 1999, 60[16], 11653-60