Planar confinement, diffusion, and surface segregation results were reported for Si which had been δ-doped into GaAs. In the case of gas-source molecular beam epitaxy, the Si diffusion (table 25) as a function of the reciprocal annealing temperature exhibited an unique 2-component Arrhenius form in which the activation energies differed by the fundamental GaAs band-gap energy of 1.5eV.

J.E.Cunningham, T.H.Chiu, B.Tell, W.Jan: Journal of Vacuum Science and Technology B, 1990, 8[2], 157-9

 

 

 

Table 25

Diffusivity of Si in GaAs

 

Temperature (C)

D (cm2/s)

960

7.5 x 10-15

955

4.7 x 10-15

895

4.4 x 10-15

900

2.0 x 10-15

795

2.0 x 10-15

790

1.1 x 10-15

695

1.0 x 10-15

695

5.1 x 10-16

645

1.9 x 10-16

590

7.8 x 10-17

535

4.9 x 10-17

605

3.7 x 10-17

485

2.0 x 10-17

590

1.9 x 10-17

555

8.2 x 10-18

515

1.0 x 10-18