The morphology of homo-epitaxially grown 6H-type and 4H-type films on off-orientation (00•1) Si-terminated and (00•¯1) C-terminated substrates was studied. The structures of extended triangular depressions and hexagonal pyramids, which formed on the film surfaces, were characterized by using transmission electron microscopy and atomic force microscopy. The important role which was played by twins in the formation of the hexagonal pyramids was demonstrated.

Study of 4H- and 6H-SiC Films Grown on Off-Oriented (0001) SiC Substrates. V.Papaioannou, J.Stoemenos, L.Di Cioccio, D.David, C.Pudda: Journal of Crystal Growth, 1998, 194[3-4], 342-52