A theoretical model was proposed for the calculation of compositional variations in III-V ternary crystals during growth. In this novel model, phase equilibrium between the crystal and the growth solution was maintained; together with a simultaneous constancy of the transported and incorporated mass of solute atoms at the crystal/solution interface. This model could be applied to the calculation of diffusion-limited growth in a temperature-gradient solution; as in the case of the source current-controlled growth method. The compositional variations of InGaAs crystals which were grown via diffusion were calculated by using this model. The incorporation of As via the crystal/solution interface was considered on the basis of phase equilibrium laws and mass-constancy. Upon comparing the experimental results with the calculated ones it was found that, in the In-Ga-As solution, the diffusion coefficient of Ga was about twice as great as that of As. The calculated compositional variations showed that the compositional uniformity of InGaAs crystals could be markedly improved by controlling growth parameters such as the temperature gradient in the solution.

K.Nakajima: Journal of Crystal Growth, 1991, 110[4], 781-94