The initial stages of Zn diffusion into InP from a polymer spin-on film were investigated. It was found that there were high concentrations of micro-defects and extended defects in the near-surface region (down to 1), an anomalously deep penetration of Zn atoms (with a diffusivity that was almost independent of temperature) and a low degree of activation of the diffused Zn. A kick-out mechanism was thought to predominate in the initial stages.

A.V.Kamanin, I.A.Mokina, N.M.Shmidt: Solid-State Electronics, 1996, 39[10], 1441-4